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1057676 IGBT, TO-220
Κατασκευαστής: ONSEMI
Part Number:HGTP12N60A4D

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IGBT, TO-220; DC Collector Current:54A; Collector Emitter Saturation Voltage Vce(on):2.7V; Power Dissipation Pd:167W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220AB; No. of Pins:3Pins; Operating Temperature Max:150?C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Current Ic Continuous a Max:54A; Fall Time tf:18ns; Full Power Rating Temperature:25?C; No. of Transistors:1; Operating Temperature Min:-55?C; Operating Temperature Range:-55?C to +150?C; Power Dissipation Max:167W; Pulsed Current Icm:96A; Rise Time:8ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Transistor Type:IGBT; Voltage Vces:600V



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