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7347995 MOSFET, N, SOT-227B
Κατασκευαστής: IXYS SEMICONDUCTOR
Part Number:IXFN130N30

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MOSFET, N, SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Drain Source Voltage Vds:300V; On Resistance Rds(on):0.022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:700W; Transistor Case Style:ISOTOP; No. of Pins:4Pins; Operating Temperature Max:150?C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Avalanche Single Pulse Energy Eas:6J; Current Id Max:130A; Current Temperature:25?C; Full Power Rating Temperature:25?C; Junction Temperature Tj Max:150?C; Junction Temperature Tj Min:-55?C; N-channel Gate Charge:380nC; No. of Transistors:1; On State Resistance Max:22mohm; Operating Temperature Min:-55?C; Operating Temperature Range:-55?C to +150?C; Pulse Current Idm:520A; Rate of Voltage Change dv / dt:5V/ns; Repetitive Avalanche Energy Max:85mJ; Reverse Recovery Time trr Typ:250ns; Termination Type:Screw; Voltage Vds Typ:300V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V



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