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4905672 MOSFET, N, SOT-227B
Κατασκευαστής: IXYS SEMICONDUCTOR
Part Number:IXFN180N10

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MOSFET, N, SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.008ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:600W; Transistor Case Style:ISOTOP; No. of Pins:4Pins; Operating Temperature Max:150?C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Avalanche Single Pulse Energy Eas:3J; Current Id Max:180A; Current Temperature:25?C; Full Power Rating Temperature:25?C; Isolation Voltage:2.5kV; Junction Temperature Tj Max:150?C; Junction Temperature Tj Min:-55?C; No. of Transistors:1; On State Resistance Max:8mohm; Operating Temperature Min:-55?C; Operating Temperature Range:-55?C to +150?C; Pulse Current Idm:720A; Repetitive Avalanche Energy Max:60mJ; Termination Type:Screw; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Weight:0.042kg



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