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4905659 MOSFET, N, SOT-227B
Κατασκευαστής: IXYS SEMICONDUCTOR
Part Number:IXFN200N07

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MOSFET, N, SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:70V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:520W; Transistor Case Style:ISOTOP; No. of Pins:3Pins; Operating Temperature Max:150?C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Avalanche Single Pulse Energy Eas:2J; Current Id Max:200A; Current Temperature:25?C; Full Power Rating Temperature:25?C; Isolation Voltage:2.5kV; Junction Temperature Tj Max:150?C; Junction Temperature Tj Min:-55?C; No. of Transistors:1; On State Resistance Max:6mohm; Operating Temperature Min:-55?C; Operating Temperature Range:-55?C to +150?C; Pulse Current Idm:600A; Repetitive Avalanche Energy Max:30mJ; Termination Type:Screw; Voltage Vds Typ:70V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Weight:0.044kg



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