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4905568 MOSFET, N, SOT-227B
Κατασκευαστής: IXYS SEMICONDUCTOR
Part Number:IXFN24N100

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MOSFET, N, SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:1kV; On Resistance Rds(on):0.39ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power Dissipation Pd:600W; Transistor Case Style:ISOTOP; No. of Pins:3Pins; Operating Temperature Max:150?C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Avalanche Single Pulse Energy Eas:3J; Current Id Max:24A; Current Temperature:25?C; Full Power Rating Temperature:25?C; Isolation Voltage:2.5kV; Junction Temperature Tj Max:150?C; Junction Temperature Tj Min:-55?C; No. of Transistors:1; On State Resistance Max:390mohm; Operating Temperature Min:-55?C; Operating Temperature Range:-55?C to +150?C; Pulse Current Idm:96A; Rate of Voltage Change dv / dt:5V/?s; Repetitive Avalanche Energy Max:60mJ; Reverse Recovery Time trr Typ:250ns; Termination Type:Screw; Voltage Vds Typ:1kV; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Weight:0.04kg



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