Είστε στο Προϊόντα > Components > Transistors > IGBT Single


1885749 IGBT,N CH,W DIODE,600V,120A,TO3PN
Κατασκευαστής: ON SEMICONDUCTOR
Part Number:FGA60N60UFDTU

Product Image
IGBT,N CH,W DIODE,600V,120A,TO3PN; DC Collector Current:120A; Collector Emitter Saturation Voltage Vce(on):600V; Power Dissipation Pd:298W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-3PN; No. of Pins:3Pins; Operating Temperature Max:150?C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Operating Temperature Min:-55?C; Operating Temperature Range:-55?C to +150?C; Power Dissipation Max:298W; Transistor Type:IGBT



RoHS: Ναι
 
Δεν μπορώ να προσθέσω στο καλάθι διότι δεν υπάρχει απόθεμα
Στείλτε email σε ένα φίλο
Βάλτε το στα υπ΄όψιν 		 


Volume Pricing
Quantity Price
1-9 € 7.62 
10-99 € 5.94 
100-249 € 5.17 
250-499 € 4.92 
500-999 € 4.48 
1000-999 € 3.77 
1000+ € 0 
Minimum Order 1 
Maximum Order  
Order Multiple 1 
Unit Price € 7.62 
Pack Size 1

Datasheet
Datasheet Request Form

 


Secured by GeoTrust Sophisticated Shopping Cart
StoreFront Version: 5.08 Developed by Rodrigo S. Alhadeff for Comersus Open Technologies LC
Σχεδιασμός & ανάπτυξη: SafeCape Software Solutions