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1858965 MOSFET,NN CH,DIODE,60V,5.3A,8-SOIC
Κατασκευαστής: VISHAY
Part Number:SI4900DY-T1-GE3

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MOSFET,NN CH,DIODE,60V,5.3A,8-SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:5.3A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.046ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150?C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Continuous Drain Current Id, N Channel:5.3A; Current Id Max:4.3A; Drain Source Voltage Vds, N Channel:60V; Module Configuration:Dual; On Resistance Rds(on), N Channel:0.046ohm; Operating Temperature Min:-55?C; Operating Temperature Range:-55?C to +150?C



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