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1653666 MOSFET,N CHAN, 100V, 1A, DIP
Κατασκευαστής: VISHAY
Part Number:IRFD110PBF

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MOSFET,N CHAN, 100V, 1A, DIP; Transistor Polarity:N Channel; Continuous Drain Current Id:1A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.54ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:1.3W; Transistor Case Style:DIP; No. of Pins:4Pins; Operating Temperature Max:175?C; Product Range:-; Automotive Qualification Standard:-; MSL:-; Current Id Max:1A; Current Temperature:25?C; Device Marking:IRFD110PBF; Full Power Rating Temperature:25?C; Junction Temperature Tj Max:150?C; Junction Temperature Tj Min:-55?C; Lead Spacing:2.54mm; No. of Transistors:1; Operating Temperature Min:-55?C; Operating Temperature Range:-55?C to +175?C; Pulse Current Idm:8A; Row Pitch:7.62mm; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V



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