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1653638 TRANSISTOR, IGBT
Κατασκευαστής: ONSEMI
Part Number:HGTG30N60B3

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TRANSISTOR, IGBT; DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):1.45V; Power Dissipation Pd:208W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150?C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Current Ic Continuous a Max:60A; Operating Temperature Min:-55?C; Operating Temperature Range:-55?C to +150?C; Power Dissipation Max:208W; Termination Type:Through Hole; Transistor Polarity:N Channel; Transistor Type:IGBT; Voltage Vces:1.45V



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