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1611490 IGBT, N
Κατασκευαστής: ONSEMI
Part Number:HGTG11N120CND

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IGBT, N; DC Collector Current:43A; Collector Emitter Saturation Voltage Vce(on):2.4V; Power Dissipation Pd:298W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150?C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Current Ic Continuous a Max:43A; Operating Temperature Min:-55?C; Operating Temperature Range:-55?C to +150?C; Power Dissipation Max:298W; Termination Type:Surface Mount Device; Transistor Polarity:N Channel; Transistor Type:IGBT; Voltage Vces:1.2kV



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