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1689581 IGBT, DUAL, MODULE, 150A, 1200V
Κατασκευαστής: FUJI ELECTRIC
Part Number:2MBI150U4A-120-50

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IGBT, DUAL, MODULE, 150A, 1200V; Transistor Polarity:N Channel; DC Collector Current:200A; Collector Emitter Saturation Voltage Vce(on):2.3V; Power Dissipation Pd:735W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:7Pins; Operating Temperature Max:150?C; Product Range:-; Current Ic @ Vce Sat:150A; Current Ic Continuous a Max:200A; Current Temperature:25?C; External Depth:34mm; External Length / Height:30mm; External Width:92mm; Fall Time tf:410ns; Full Power Rating Temperature:25?C; Isolation Voltage:2.5kV; Junction Temperature Tj Max:150?C; Module Configuration:Dual; No. of Transistors:2; Power Dissipation Max:735W; Pulsed Current Icm:400A; Rise Time:320ns; Termination Type:Screw; Voltage Vces:1.2kV



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