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1300108 IGBT, ISOI4-PAC
Κατασκευαστής: IXYS SEMICONDUCTOR
Part Number:IXGF32N170

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IGBT, ISOI4-PAC; DC Collector Current:44A; Collector Emitter Saturation Voltage Vce(on):3.5V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:1.7kV; Transistor Case Style:ISOPLUS i4-PAC; No. of Pins:3Pins; Operating Temperature Max:150?C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Current Ic Continuous a Max:26A; Junction to Case Thermal Resistance A:0.65?C/W; Operating Temperature Min:-55?C; Operating Temperature Range:-55?C to +150?C; Pin Configuration:Single; Power Dissipation Max:200W; Termination Type:Through Hole; Transistor Polarity:N Channel; Transistor Type:IGBT; Voltage Vces:1700V



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