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1095121 IGBT, N, TO-220
Κατασκευαστής: ONSEMI
Part Number:HGTP7N60A4

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IGBT, N, TO-220; DC Collector Current:34A; Collector Emitter Saturation Voltage Vce(on):2.7V; Power Dissipation Pd:125W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220AB; No. of Pins:3Pins; Operating Temperature Max:150?C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Current Ic Continuous a Max:34A; Current Temperature:25?C; Fall Time tf:45ns; Full Power Rating Temperature:25?C; No. of Transistors:1; Operating Temperature Min:-55?C; Operating Temperature Range:-55?C to +150?C; Pin Format:GCE; Power Dissipation Max:125W; Power Dissipation Ptot Max:125W; Pulsed Current Icm:56A; Rise Time:11ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Transistor Type:IGBT; Voltage Vces:600V



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