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1095113 IGBT, N, 600V, 75A, TO-247
Κατασκευαστής: ONSEMI
Part Number:HGTG30N60A4

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IGBT, N, 600V, 75A, TO-247; DC Collector Current:75A; Collector Emitter Saturation Voltage Vce(on):2.6V; Power Dissipation Pd:463W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150?C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Alternate Case Style:SOT-249; Current Ic Continuous a Max:75A; Current Temperature:25?C; Device Marking:HGTG30N60A4; Fall Time tf:38ns; Full Power Rating Temperature:25?C; No. of Transistors:1; Operating Temperature Min:-55?C; Operating Temperature Range:-55?C to +150?C; Pin Format:GCE; Power Dissipation Max:463W; Power Dissipation Ptot Max:463W; Pulsed Current Icm:240A; Rise Time:12ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Transistor Type:IGBT; Voltage Vces:600V



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